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DCR1003SN1717 Datasheet(PDF) 2 Page - American Microsemiconductor

Part # DCR1003SN1717
Description  High Power Button Capsule Thyristor
Download  4 Pages
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Manufacturer  AMMSEMI [American Microsemiconductor]
Direct Link  http://www.americanmicrosemi.com/
Logo AMMSEMI - American Microsemiconductor

DCR1003SN1717 Datasheet(HTML) 2 Page - American Microsemiconductor

  DCR1003SN1717 Datasheet HTML 1Page - American Microsemiconductor DCR1003SN1717 Datasheet HTML 2Page - American Microsemiconductor DCR1003SN1717 Datasheet HTML 3Page - American Microsemiconductor DCR1003SN1717 Datasheet HTML 4Page - American Microsemiconductor  
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Tel.1-973-377-9566Fax.1-973-377-3078
133KingsRoad
Madison,NewJersey07940
UnitedStatesofAmerica
www.americanmicrosemi.com
DEKRACertificationInc.
AS9100CandISO9001:2008
CertificateNo.131519.01
©2016AmericanMicrosemiconductor,Inc.
Specificationsaresubjecttochangewithoutnotice
DocumentPage2of4
Revised05/2016
DCR1003Series
DCR1004Series
IT(AV)=1540A
VRRM=1700V
CHARACTERISTICS―Tcase=25
oCunlessotherwisestated
LIMIT
5%
Typ
95%
Max
Units
VTM
On-statevoltage
At2900Apeak
DCR1003
1.5
V
DCR1004
1.625
V
IDM
Peakoff-statecurrent
Tcase=125
oC
50
mA
IRM
Peakreversecurrent
Tcase=125
oC
50
mA
IL
Latchingcurrent
VD=5VTp=30µS
120
mA
IH
Holdingcurrent
VD=5VGateopencircuit
77
mA
td
Delaytime
VD=100V,Gatesource=25V5Ω
0.58
0.8
1.52
µs
tq
Circuitcommutated
IT=800A,VRRM=50V,dlRR/dt=20A/µS
90
215
380
µs
Turn-offtime
VDR=fullratedVD,
dVDR/dt=20V/µsIinear,Tcase=125
oC
VGT
Gatetriggervoltage
VDRM=5V
3.5
V
VGD
Gatenon-triggervoltage
AtVDRM,Tcase=5V
0.25
V
IGT
Gatetriggercurrent
VDWM=5V
200
mA


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