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25CTQ-1 Datasheet(PDF) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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25CTQ-1 Datasheet(HTML) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
4 / 6 page SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N0024, Rev. - • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 25CTQ… 25CTQ…S 25CTQ…-1 Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage VRWM - 35(25CTQ035) 40(25CTQ040) 45(25CTQ045) V Max. Average Forward IF(AV) 50% duty cycle @TC =102°C, rectangular wave form 30 A Max. Peak One Cycle Non- Repetitive Surge Current (per leg) IFSM 8.3 ms, half Sine pulse 300 A Electrical Characteristics: Characteristics Symbol Condition Max. Units VF1 @ 15A, Pulse, TJ = 25 °C @ 30A, Pulse, TJ = 25 °C 0.56 0.71 V Max. Forward Voltage Drop* VF2 @ 15A, Pulse, TJ = 125 °C @ 30A, Pulse, TJ = 125 °C 0.50 0.64 V Max. Reverse Current at DC condition IR1 @VR = rated VR TJ = 25 °C 1.0 mA Max. Reverse Current IR2 @VR = rated VR TJ = 125 °C 70 mA Max. Junction Capacitance CT @VR = 5V, TC = 25 °C fSIG = 1MHz 900 pF Typical Series Inductance LS Measured lead to lead 5 mm from package body 8.0 nH Max. Voltage Rate of Change(Rated VR) dv/dt - 10,000 V/ μs * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature TJ - -55 to +150 °C Max. Storage Temperature Tstg - -55 to +150 °C Maximum Thermal Resistance Junction to Case (per leg) RθJC DC operation 3.25 °C/W Typical Thermal Resistance, case to Heat Sink Rθcs Mounting surface, smooth and greased 0.50 °C/W Approximate Weight wt - 2 g Case Style TO-220AB,D 2PAK,TO-262(Suffix“s”for D2PAK; Suffix“-1”for TO-262) |
Similar Part No. - 25CTQ-1 |
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Similar Description - 25CTQ-1 |
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