BSC16DN25NS3 datasheet(1/9 Pages) INFINEON

Part #	BSC16DN25NS3

Description	OptiMOSTM3 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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Type

BSC16DN25NS3 G

OptiMOSTM3 Power-Transistor

Features

• Optimized for dc-dc conversion

• N-channel, normal level

• Excellent gate charge x R

DS(on) product (FOM)

• Low on-resistance R

DS(on)

• 150 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC

1) for target application

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

10.9

A

T C=100 °C

7.7

Pulsed drain current

2)

I D,pulse

T C=25 °C

44

Avalanche energy, single pulse

E AS

I D=5.5 A, R GS=25 W

120

mJ

Reverse diode dv /dt

dv /dt

10

kV/µs

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

62.5

W

Operating and storage temperature

T j, T stg

-55 ... 150

°C

IEC climatic category; DIN IEC 68-1

55/150/56

Value

1)J-STD20 and JESD22

2) see figure 3

V

DS

250

V

R

DS(on),max

165

m

W

I

D

10.9

A

Product Summary

Type

Package

Marking

BSC16DN25NS3 G

PG-TDSON-8

16DN25NS

PG-TDSON-8

Rev. 2.2

page 1

2011-07-14

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