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BSC016N06NS Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BSC016N06NS Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 10 page BSC016N06NS OptiMOS TM Power-MOSFET Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC 1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Higher solder joint reliability due to enlarged source interconnection Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D V GS=10 V, T C=25 °C 100 A V GS=10 V, T C=100 °C 100 V GS=10 V, T A=25 °C, R thJA=50 K/W 2) 30 Pulsed drain current 3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse 4) E AS I D=50 A, R GS=25 W 380 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Value 4) See figure 13 for more detailed information 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information PG-TDSON-8 FL Type Package Marking BSC016N06NS PG-TDSON-8 FL 016N06NS enlarged source interconnection V DS 60 V R DS(on),max 1.6 m W I D 100 A Q OSS 81 nC Q G(0V..10V) 71 nC Product Summary Rev. 2.1 page 1 2013-01-29 |
Similar Part No. - BSC016N06NS_13 |
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Similar Description - BSC016N06NS_13 |
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