BSC016N06NS_13 datasheet(1/10 Pages) INFINEON

Part #	BSC016N06NS

Description	OptiMOSTM Power-MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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BSC016N06NS

OptiMOS

TM Power-MOSFET

Features

• Optimized for synchronous rectification

• 100% avalanche tested

• Superior thermal resistance

• N-channel

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

• Higher solder joint reliability due to enlarged source interconnection

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

100

A

V GS=10 V, T C=100 °C

100

V GS=10 V, T A=25 °C,

R thJA=50 K/W

2)

30

Pulsed drain current

3)

I D,pulse

T C=25 °C

400

Avalanche energy, single pulse

4)

E AS

I D=50 A, R GS=25 W

380

mJ

Gate source voltage

V GS

±20

V

1) J-STD20 and JESD22

Value

4) See figure 13 for more detailed information

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

3) See figure 3 for more detailed information

PG-TDSON-8 FL

Type

Package

Marking

BSC016N06NS

PG-TDSON-8 FL

016N06NS

enlarged source interconnection

V

DS

60

V

R

DS(on),max

1.6

m

W

I

D

100

A

Q

OSS

81

nC

Q

G(0V..10V)

71

nC

Product Summary

Rev. 2.1

page 1

2013-01-29

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