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BSB104N08NP3G Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSB104N08NP3G Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 11 page BSB104N08NP3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 1600 2100 pF Output capacitance C oss - 430 570 Reverse transfer capacitance Crss - 18 27 Turn-on delay time t d(on) - 9 - ns Rise time t r - 4 - Turn-off delay time t d(off) - 19 - Fall time t f - 4 - Gate Charge Characteristics 4) Gate to source charge Q gs - 8 11 nC Gate to drain charge Q gd - 5 8 Switching charge Q sw - 8 12 Gate charge total Q g - 23 31 Gate plateau voltage V plateau - 5.0 - V Output charge Q oss V DD=40 V, V GS=0 V - 31 41 nC Reverse Diode Diode continuous forward current I S - - 30 A Diode pulse current I S,pulse - - 200 Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.9 1.2 V Reverse recovery time t rr - 43 - ns Reverse recovery charge Q rr - 55 - nC 4) See figure 16 for gate charge parameter definition V R=40 V, I F=30 A, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=30 A, R G,ext=1.6 W V DD=40 V, I D=30 A, V GS=0 to 10 V Rev. 2.1 page 3 2013-11-28 |
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