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BFR183 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFR183 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 6 page 2014-04-03 1 BFR183 Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 65 mA Base current IB 5 Total power dissipation1) TS ≤ 60 °C Ptot 450 mW Junction temperature TJ 150 °C Storage temperature TStg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 200 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) |
Similar Part No. - BFR183_14 |
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Similar Description - BFR183_14 |
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