BSC024NE2LS datasheet(5/12 Pages) INFINEON

Part #	BSC024NE2LS

Description	n-Channel Power MOSFET

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Manufacturer	INFINEON [Infineon Technologies AG]

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OptiMOS™ Power-MOSFET

BSC024NE2LS

Electrical characteristics

Final Data Sheet

4

2.1, 2011-09-20

Table 6

Gate charge characteristics

1)

1) See figure 16 for gate charge parameter definition

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Gate to source charge

Q

gs

-4.4

-

nC

V

DD=12 V,

I

D=30 A,

V

GS=0 to 4.5 V

Gate charge at threshold

Q

g(th)

-2.7

-

Gate to drain charge

Q

gd

-2.6

-

Switching charge

Q

sw

-4.3

-

Gate charge total

Q

g

-11

-

Gate plateau voltage

V

plateau

-2.6

-

V

Gate charge total

Q

g

-23

-

nC

V

DD=12 V,

I

D=30 A,

V

GS=0 to 10V

Gate charge total, sync. FET

Q

g(sync)

-10

-

V

DS=0.1 V,

V

GS=0 to 4.5 V

Output charge

Q

oss

-13

-

V

DD=12 V, VGS=0 V

Table 7

Reverse diode characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode continuous forward current

I

s

--

48

A

T

C=25 °C

Diode pulse current

I

S,pulse

--

192

Diode forward voltage

V

SD

-0.85

1

V

GS=0 V, IF=30 A,

T

j=25 °C

Reverse recovery charge

Q

rr

-15

-

nC

V

R=15 V, IF=Is,

d

I

F/dt=400 A/µs

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