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BSC024NE2LS Datasheet(PDF) 5 Page - Infineon Technologies AG |
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BSC024NE2LS Datasheet(HTML) 5 Page - Infineon Technologies AG |
5 / 12 page OptiMOS™ Power-MOSFET BSC024NE2LS Electrical characteristics Final Data Sheet 4 2.1, 2011-09-20 Table 6 Gate charge characteristics 1) 1) See figure 16 for gate charge parameter definition Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Gate to source charge Q gs -4.4 - nC V DD=12 V, I D=30 A, V GS=0 to 4.5 V Gate charge at threshold Q g(th) -2.7 - Gate to drain charge Q gd -2.6 - Switching charge Q sw -4.3 - Gate charge total Q g -11 - Gate plateau voltage V plateau -2.6 - V Gate charge total Q g -23 - nC V DD=12 V, I D=30 A, V GS=0 to 10V Gate charge total, sync. FET Q g(sync) -10 - V DS=0.1 V, V GS=0 to 4.5 V Output charge Q oss -13 - V DD=12 V, VGS=0 V Table 7 Reverse diode characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Diode continuous forward current I s -- 48 A T C=25 °C Diode pulse current I S,pulse -- 192 Diode forward voltage V SD -0.85 1 V V GS=0 V, IF=30 A, T j=25 °C Reverse recovery charge Q rr -15 - nC V R=15 V, IF=Is, d I F/dt=400 A/µs |
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