MPSA14 datasheet(1/4 Pages) JIANGSU

Part #	MPSA14

Description	TRANSISTOR (NPN)

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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TO – 92

1.EMITTER

2.BASE

3.COLLECTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

MPSA14

TRANSISTOR (NPN)

FEATURES

Darlington Transistor

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 0.1mA,IE=0

30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA,IC=0

10

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=10V,IC=0

0.1

μA

hFE(1)

*

VCE=5V, IC=10mA

10000

DC current gain

hFE(2)

*

VCE=5V, IC=100mA

20000

Collector-emitter saturation voltage

VCE(sat)

*

IC=100mA,IB=0.1mA

1.5

V

Base-emitter voltage

VBE

*

VCE=5V,IC=100mA

2.0

V

Transition frequency

fT

VCE=5V,IC=10mA,f=100MHz

125

MHz

*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current

-Continous

0.5

A

PC

Collector Power Dissipation

625

mW

RθJA

Thermal Resistance From Junction To Ambient

200

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

D,Aug,2016

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