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BSC076N06NS3G Datasheet(PDF) 6 Page - Infineon Technologies AG |
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BSC076N06NS3G Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 9 page BSC076N06NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ max 2 4 6 8 10 12 14 -60 -20 20 60 100 140 180 T j [°C] 35 µA 350 mA 0 1 2 3 4 5 -60 -20 20 60 100 140 180 T j [°C] Ciss Coss Crss 101 102 103 104 1 10 100 1000 10000 0 20 40 60 V DS [V] 25 °C 150 °C 150°C 98% 25°C 98% 100 101 102 103 0 0.5 1 1.5 2 V SD [V] Rev.2.4 page 6 2013-05-17 |
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