10N65 datasheet(1/2 Pages) CHONGQING

Part #	10N65

Description	F10A mps,650 Volts N-CHANNEL MOSFET

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Manufacturer	CHONGQING [Chongqing Pingwei Enterprise co.,Ltd]

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Rev. 14-1

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10N65(F,B,H)

10A mps,650 Volts N-CHANNEL MOSFET

FEATURE



10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A



Low gate charge



Low Ciss



Fast switching



100% avalanche tested



Improved dv/dt capability

TO-220AB

ITO-220AB

10N65

10N65F

TO-263

TO-262

10N65B

10N65H

Absolute Maximum Ratings(TC=25℃,unless otherwise noted)

Parameter

Symbol

10N65

UNIT

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

±

30

Continuous Drain Current

ID

10

A

Pulsed Drain Current(Note1)

IDM

40

Single Pulse Avalanche Energy (Note 2)

EAS

300

mJ

Avalanche Current(Note1)

IAR

10

A

Repetitive Avalanche Energy (Note1)

EAR

30

mJ

Reverse Diode dV/dt (Note 3)

dv/dt

5.5

V/ns

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

℃

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

TL

260

℃

Mounting Torque

6-32 or M3 screw

10

lbf·in

1.1

N·m

Thermal Characteristics

Parameter

Symbol

ITO-220

TO-220

TO-262

TO-263

Units

Maximum Junction-to-Case

RthJC

1.0

0.8

℃

/W

Maximum Power Dissipation

TC=25℃

PD

125

155

W

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10N65 Datasheet(PDF) 1 Page - Chongqing Pingwei Enterprise co.,Ltd

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