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10N65 Datasheet(PDF) 1 Page - Chongqing Pingwei Enterprise co.,Ltd |
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10N65 Datasheet(HTML) 1 Page - Chongqing Pingwei Enterprise co.,Ltd |
1 / 2 page - 页码 - Rev. 14-1 http:// www.perfectway.cn 10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE 10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB ITO-220AB 10N65 10N65F TO-263 TO-262 10N65B 10N65H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol 10N65 UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ± 30 Continuous Drain Current ID 10 A Pulsed Drain Current(Note1) IDM 40 Single Pulse Avalanche Energy (Note 2) EAS 300 mJ Avalanche Current(Note1) IAR 10 A Repetitive Avalanche Energy (Note1) EAR 30 mJ Reverse Diode dV/dt (Note 3) dv/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ,TSTG -55 to +150 ℃ Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds TL 260 ℃ Mounting Torque 6-32 or M3 screw 10 lbf·in 1.1 N·m Thermal Characteristics Parameter Symbol ITO-220 TO-220 TO-262 TO-263 Units Maximum Junction-to-Case RthJC 1.0 0.8 0.8 ℃ /W Maximum Power Dissipation TC=25℃ PD 125 155 155 W |
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