IKA15N60T datasheet(2/13 Pages) INFINEON

Part #	IKA15N60T

Description	IGBT in TRENCHSTOP??and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKA15N60T

TRENCHSTOP

™ Series

q

IFAG IPC TD VLS

2

Rev. 2.6 25.07.2016

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction

– case

R t hJC

4.2

K/W

Diode thermal resistance,

junction

– case

R t hJC D

4.8

Thermal resistance,

junction

– ambient

R t hJA

80

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

min.

Typ.

max.

Static Characteristic

Collector-emitter breakdown voltage

V( BR )C ES VGE = 0V , IC = 0 .2mA

600

-

V

Collector-emitter saturation voltage

VC E( sat )

VGE = 15 V , IC = 15 A

T j =2 5 C

T j =1 7 5 C

-

1.5

1.9

2.05

-

Diode forward voltage

VF

VGE = 0V , IF = 15 A

T j =2 5 C

T j =1 7 5 C

-

1.65

1.6

2.05

-

Gate-emitter threshold voltage

VG E( t h)

I C = 21 0µ A, VCE = VGE

4.1

4.9

5.7

Zero gate voltage collector current

I CE S

VCE = 600V,

VGE = 0V

T j =2 5 C

T j =1 7 5 C

-

40

1000

µA

Gate-emitter leakage current

I GE S

VCE = 0V , VGE =2 0 V

-

100

nA

Transconductance

g fs

VCE = 20 V , IC = 15 A

-

8.7

-

S

Integrated gate resistor

R G int

-

Ω

Dynamic Characteristic

Input capacitance

C i ss

VCE = 25 V ,

VGE = 0V ,

f = 1 M H z

-

860

-

pF

Output capacitance

C os s

-

55

-

Reverse transfer capacitance

C rs s

-

24

-

Gate charge

Q Gat e

VCC = 48 0 V, I C =15 A

VGE = 15 V

-

87

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

L E

-

7

-

nH

Short circuit collector current

1)

I C( SC )

VGE = 15 V ,t SC 5 s

VC C = 4 0 0 V,

T j  150C

-

137.5

-

A

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

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