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SKB02N120 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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SKB02N120 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 13 page SKB02N120 6 Rev. 2.4 12.06.2013 0A 2A 4A 6A 8A 10ns 100ns t r t d(on) t f t d(off) 0 50 100 150 10ns 100ns t r t d(on) t f t d(off) IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, RG = 9 1, dynamic test circuit in Fig.E ) Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 800V, VGE = +15V/0V, IC = 2A, dynamic test circuit in Fig.E) -50°C 0°C 50°C 100°C 150°C 10ns 100ns t r t d(on) t f t d(off) -50°C 0°C 50°C 100°C 150°C 0V 1V 2V 3V 4V 5V 6V typ. min. max. Tj, JUNCTION TEMPERATURE Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 91, dynamic test circuit in Fig.E ) Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) |
Similar Part No. - SKB02N120_13 |
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Similar Description - SKB02N120_13 |
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