IKW40N120T2 datasheet(8/15 Pages) INFINEON

Part #	IKW40N120T2

Description	IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel Emitter Controlled Diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKW40N120T2

TrenchStop

® 2nd Generation Series

IFAG IPC TD VLS

8

Rev. 2.4

23.09.2014

20A

40A

60A

0.0mJ

5.0mJ

10.0mJ

15.0mJ

20.0mJ

E

ts*

E

off

*) E

on and Etsinclude losses

due to diode recovery

E

on*









0.0 mJ

2.5 mJ

5.0 mJ

7.5 mJ

10.0 mJ

E

ts*

E

on*

*) E

on and Ets include losses

due to diode recovery

E

off

IC, COLLECTOR CURRENT

RG, GATE RESISTOR

Figure 13. Typical switching energy losses as

a function of collector current

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, RG=12Ω,

Dynamic test circuit in Figure E)

Figure 14. Typical switching energy losses as a

function of gate resistor

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, IC=40A,

Dynamic test circuit in Figure E)

0°C

50°C

100°C

150°C

0.0mJ

2.5mJ

5.0mJ

7.5mJ

E

ts*

E

on*

*) E

on and Ets include losses

due to diode recovery

E

off

400V

500V

600V

700V

0.0mJ

2.5mJ

5.0mJ

7.5mJ

10.0mJ

E

ts*

E

on*

*) E

on and Ets include losses

due to diode recovery

E

off

TJ, JUNCTION TEMPERATURE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses as

a function of junction temperature

(inductive load, VCE=600V, VGE=0/15V,

IC=40A, RG=12Ω,

Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses as

a function of collector emitter

voltage

(inductive load, TJ=175°C, VGE=0/15V,

IC=40A, RG=12Ω,

Dynamic test circuit in Figure E)

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IKW40N120T2 Datasheet(PDF) 8 Page - Infineon Technologies AG

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