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IPA60R800CE Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # IPA60R800CE
Description  600V CoolMOS짧 CE Power Transistor
Download  16 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPA60R800CE Datasheet(HTML) 1 Page - Infineon Technologies AG

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IPD60R800CE,IPA60R800CE
Rev.2.3,2016-08-08
Final Data Sheet
tab
1
2
3
DPAK
PG-TO220FP
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:Note1:ForMOSFETparallelingtheuseofferritebeadson
thegateorseparatetotempolesisgenerallyrecommended.
Note2:*6R800CEisFullPAKmarkingonly
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
800
m
Ω
Id.
8.4
A
Qg.typ
17.2
nC
ID,pulse
15.7
A
Eoss@400V
1.6
µJ
Type/OrderingCode
Package
Marking
RelatedLinks
IPD60R800CE
PG-TO 252
IPA60R800CE
PG-TO 220 FullPAK
60S800CE / 6R800CE*
see Appendix A


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