IPA60R199CP datasheet(5/10 Pages) INFINEON

Part #	IPA60R199CP

Description	CoolMOS짰 Power Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPA60R199CP

5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I D=f(V DS); T j=150 °C

R DS(on)=f(I D); T j=150 °C

parameter: V GS

7 Drain-source on-state resistance

8 Typ. transfer characteristics

R DS(on)=f(T j); I D=9.9 A; V GS=10 V

I D=f(V GS); |V DS|>2|I D|R DS(on)max

parameter: T j

typ

98 %

0

0.1

0.2

0.3

0.4

0.5

0.6

-60

-20

20

60

100

140

180

T j [°C]

C °25

C °150

0

20

40

60

80

024

68

10

V GS [V]

4.5 V

5 V

5.5 V

6 V

7 V

8 V

10 V

20 V

0

5

10

15

20

25

30

35

0

5

10

15

20

V DS [V]

5 V

5.5 V

6 V

6.5 V

7 V

10 V

0

0.2

0.4

0.6

0.8

1

1.2

0

10203040

I D [A]

Rev. 2.

2

page 5

20

11-12-20

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IPA60R199CP Datasheet(PDF) 5 Page - Infineon Technologies AG

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