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IPA057N08N3G Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IPA057N08N3G Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 10 page IPA057N08N3 G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 3570 4750 pF Output capacitance C oss - 963 1280 Reverse transfer capacitance C rss - 36 - Turn-on delay time t d(on) - 17 - ns Rise time t r - 42 - Turn-off delay time t d(off) - 36 - Fall time t f - 9 - Gate Charge Characteristics 5) Gate to source charge Q gs - 18 - nC Gate to drain charge Q gd - 10 - Switching charge Q sw - 18 - Gate charge total Q g - 52 69 Gate plateau voltage V plateau - 5.0 - V Output charge Q oss V DD=40 V, V GS=0 V - 70 93 nC Reverse Diode Diode continous forward current I S - - 60 A Diode pulse current I S,pulse - - 240 Diode forward voltage V SD V GS=0 V, I F=60 A, T j=25 °C - 1.0 1.2 V Reverse recovery time t rr - 64 - ns Reverse recovery charge Q rr - 121 - nC 5) See figure 16 for gate charge parameter definition V R=40 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=60 A, R G,ext=1.6 W V DD=40 V, I D=60 A, V GS=0 to 10 V Rev. 2.2 page 3 2015-08-2 7 |
Similar Part No. - IPA057N08N3G_15 |
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Similar Description - IPA057N08N3G_15 |
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