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SI5999EDU Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI5999EDU Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 67019 S10-2428-Rev. A, 25-Oct-10 Vishay Siliconix Si5999EDU TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage 0 2 4 6 8 10 0 369 12 15 ID =5A VDS =5V VDS =10V VDS =16V Q g - Total Gate Charge (nC) 0.1 1 10 100 0.0 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) 0.45 0.65 0.85 1.05 1.25 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA T J - Temperature (°C) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.7 0.9 1.1 1.3 1.5 - 50 - 25 0 25 50 75 100 125 150 ID =5A VGS =4.5 V VGS =2.5 V T J - Junction Temperature (°C) 0.00 0.05 0.10 0.15 0.20 0 2 468 10 TJ =25 °C TJ = 125 °C ID =5A V GS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 30 Time (s) 0 0 0 1 1 0.1 0.01 0.001 10 100 |
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