TMS28F020

262144 BY 8-BIT

FLASH MEMORY

SMJS020C – OCTOBER 1994 – REVISED JANUARY 1998

1

POST OFFICE BOX 1443

EPROMs

’28F020-10

100 ns

’28F020-12

120 ns

’28F020-15

150 ns

’28F020-17

170 ns

Versions Available

and Output Lines

– Active Write . . . 55 mW

– Active Read... 165 mW

– Electrical Erase... 82.5 mW

– Standby... 0.55 mW

(CMOS-Input Levels)

– 40

°C to 125°C

description

The TMS28F020 flash memory is a 262 144 by

8-bit (2 097 152-bit), programmable read-only

memory that can be electrically bulk-erased and

reprogrammed. It is available in 100 000 and

10 000 program/erase-endurance-cycle versions.

The TMS28F020 is offered in a 32-lead plastic

leaded chip-carrier package using 1,25-mm

(50-mil) lead spacing (FM suffix) and a 32-lead

thin small-outline package (DD suffix).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

A0 – A17

Address Inputs

DQ0 – DQ7

Inputs (programming) / Outputs

E

Chip Enable

G

Output Enable

VCC

5-V Power Supply

VPP

12-V Power Supply

VSS

Ground

W

Write Enable

PIN NOMENCLATURE

32 1 32 31

14

5

6

7

8

9

10

11

12

13

29

28

27

26

25

24

23

22

21

A14

A13

A8

A9

A11

G

A10

E

DQ7

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

430

15 16 17 18 19

FM PACKAGE

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PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Copyright

© 1998, Texas Instruments Incorporated