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FF300R12KS4P Datasheet(PDF) 6 Page - Infineon Technologies AG |
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FF300R12KS4P Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 9 page 6 TechnischeInformation/TechnicalInformation FF300R12KS4P IGBT-Modul IGBT-Module preparedby:AKB approvedby:MK dateofpublication:2016-03-09 revision:V2.0 VorläufigeDaten PreliminaryData SchaltverlusteIGBT,Wechselrichter(typisch) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=300A,VCE=600V RG [ Ω] 0 2 4 6 8 10 12 14 16 18 20 0 20 40 60 80 100 120 140 Eon, Tvj = 125°C Eoff, Tvj = 125°C TransienterWärmewiderstandIGBT,Wechselrichter transientthermalimpedanceIGBT,Inverter ZthJH=f(t) t [s] 0,001 0,01 0,1 1 10 0,001 0,01 0,1 ZthJH : IGBT i: ri[K/W]: τi[s]: 1 0,0065 0,000854 2 0,0275 0,0266 3 0,0349 0,148 4 0,0171 1,27 SichererRückwärts-ArbeitsbereichIGBT,Wechselrichter (RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=3 Ω,Tvj=125°C VCE [V] 0 200 400 600 800 1000 1200 1400 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 IC, Modul IC, Chip DurchlasskennliniederDiode,Wechselrichter(typisch) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) VF [V] 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0 100 200 300 400 500 600 Tvj = 25°C Tvj = 125°C |
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