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FF300R12KS4P Datasheet(PDF) 2 Page - Infineon Technologies AG |
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FF300R12KS4P Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 9 page 2 TechnischeInformation/TechnicalInformation FF300R12KS4P IGBT-Modul IGBT-Module preparedby:AKB approvedby:MK dateofpublication:2016-03-09 revision:V2.0 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1200 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TH = 25°C, Tvj max = 150°C IC nom 300 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 600 A Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V VCE sat 3,20 3,85 3,75 V V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung Gatethresholdvoltage IC = 12,0 mA, VCE = VGE, Tvj = 25°C VGEth 4,50 5,50 6,50 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 3,20 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 1,0 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 20,0 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,40 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 3,0 Ω td on 0,10 0,11 µs µs Tvj = 25°C Tvj = 125°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 3,0 Ω tr 0,06 0,07 µs µs Tvj = 25°C Tvj = 125°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 3,0 Ω td off 0,53 0,55 µs µs Tvj = 25°C Tvj = 125°C Fallzeit,induktiveLast Falltime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 3,0 Ω tf 0,03 0,04 µs µs Tvj = 25°C Tvj = 125°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 300 A, VCE = 600 V, LS = 60 nH VGE = ±15 V, di/dt = 5000 A/µs RGon = 3,0 Ω Eon 25,0 mJ mJ Tvj = 25°C Tvj = 125°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 300 A, VCE = 600 V, LS = 60 nH VGE = ±15 V, du/dt = 7500 V/µs RGoff = 3,0 Ω Eoff 15,0 mJ mJ Tvj = 25°C Tvj = 125°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt ISC 2000 A Tvj = 125°C tP ≤ 10 µs, Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proIGBT/perIGBT validwithIFXpre-appliedthermalinterfacematerial RthJH 0,0860 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 125 °C |
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