Electronic Components Datasheet Search |
|
FD800R17HP4-K_B2 Datasheet(PDF) 2 Page - Infineon Technologies AG |
|
FD800R17HP4-K_B2 Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 12 page 2 TechnischeInformation/TechnicalInformation FD800R17HP4-K_B2 IGBT-Modul IGBT-Module preparedby:WB approvedby:IB dateofpublication:2016-01-21 revision:V3.1 IGBT,Brems-Chopper/IGBT,Brake-Chopper HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = -40°C Tvj = 25°C Tvj = 150°C VCES 1570 1700 1700 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C IC nom 800 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1600 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 5,20 kW Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 800 A, VGE = 15 V IC = 800 A, VGE = 15 V IC = 800 A, VGE = 15 V VCE sat 1,90 2,30 2,40 2,25 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 48,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 8,50 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 1,9 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 65,0 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 2,10 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1570 V, VGE = 0 V, Tvj = 25°C ICES 5,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 800 A, VCE = 900 V VGE = ±15 V RGon = 0,39 Ω td on 0,50 0,55 0,55 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 800 A, VCE = 900 V VGE = ±15 V RGon = 0,39 Ω tr 0,10 0,12 0,12 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 800 A, VCE = 900 V VGE = ±15 V RGoff = 2,2 Ω td off 1,10 1,20 1,25 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 800 A, VCE = 900 V VGE = ±15 V RGoff = 2,2 Ω tf 0,40 0,70 0,75 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 800 A, VCE = 900 V, LS = 50 nH VGE = ±15 V RGon = 0,39 Ω Eon 180 245 265 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 800 A, VCE = 900 V, LS = 50 nH VGE = ±15 V RGoff = 2,2 Ω Eoff 240 325 345 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC 3800 A Tvj = 150°C tP ≤ 10 µs, Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proIGBT/perIGBT RthJC 23,2 K/kW Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proIGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 30,0 K/kW TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C |
Similar Part No. - FD800R17HP4-K_B2 |
|
Similar Description - FD800R17HP4-K_B2 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |