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1EDI20H12AH Datasheet(PDF) 9 Page - Infineon Technologies AG

Part # 1EDI20H12AH
Description  Single channel IGBT gate driver IC in wide body package
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

1EDI20H12AH Datasheet(HTML) 9 Page - Infineon Technologies AG

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4
Electrical Parameters
4.1
Absolute Maximum Ratings
Note:
Absolute maximum ratings are defined as ratings, which when being exceeded may lead to
destruction of the integrated circuit. Unless otherwise noted all parameters refer to GND1.
Table 2
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Max.
Power supply output side
VVCC2
-0.3
40
V
1)
Gate driver output
VOUT
VGND2-0.3 VVCC2+0.3 V
1)
Positive power supply input side
VVCC1
-0.3
18.0
V
Logic input voltages (IN+,IN-)
VLogicIN
-0.3
18.0
V
Input to output isolation voltage (GND2)
VGND2
-1200
1200
V
GND2 - GND1
Junction temperature
TJ
-40
150
°C
Storage temperature
TS
-55
150
°C
Power dissipation (Input side)
PD, IN
25
mW
2) @TA = 25°C
Power dissipation (Output side)
PD, OUT
400
mW
2) @TA = 25°C
Thermal resistance (Input side)
RTHJA,IN
145
K/W
2) @TA = 85°C
Thermal resistance (Output side)
RTHJA,OUT
165
K/W
2) @TA = 85°C
ESD capability
VESD,HBM
2
kV
Human body model3)
VESD,CDM
1
kV
Charged device
model4)
1 With respect to GND2.
2 See Figure 10 for reference layouts for these thermal data. Thermal performance may change significantly
with layout and heat dissipation of components in close proximity.
3 According to EIA/JESD22-A114-C (discharging a 100 pF capacitor through a 1.5 kΩ series resistor).
4 According to EIA/JESD22-C101 (specified waveform characteristics)
EiceDRIVER1EDI Compact
Single channel IGBT gate driver IC in wide body package
Electrical Parameters
Datasheet
9
Rev. 2.0
2016-07-05


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