IPD65R1K4C6 datasheet(4/15 Pages) INFINEON

Part #	IPD65R1K4C6

Description	Metal Oxide Semiconductor Field Effect Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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4

650VCoolMOS™C6PowerTransistor

IPD65R1K4C6

Rev.2.0,2013-07-26

Final Data Sheet

2Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

3.2

A

TC=25°C

2.0

TC=100°C

Pulsed drain current

2)

ID‚pulse

8.3

A

TC=25°C

Avalanche energy, single pulse

EAS

26

mJ

ID=0.6A,VDD=50V

(see table 10)

Avalanche energy, repetitive

EAR

0.10

mJ

ID=0.6A,VDD=50V

Avalanche current, repetitive

IAR

0.6

A

MOSFET dv/dt ruggedness

dv/dt

50

V/ns

VDS=0...480V

Gate source voltage

VGS

-20

20

V

static

-30

30

AC (f > 1 Hz)

Operating and storage temperature

Tj‚Tstg

-55

150

°C

Continuous diode forward current

IS

2.8

A

TC=25°C

Diode pulse current

IS‚pulse

8.3

A

TC=25°C

Reverse diode dv/dt

3)

dv/dt

15

V/ns

VDS=0...400V,ISD

≤ID,

Tj=25°C

(see table 8)

Maximum diode commutation speed

dif/dt

500

A/µs

Power dissipation

Ptot

28

W

TC=25°C

1) Limited by Tj max. Maximum duty cycle D=0.75

2) Pulse width tp limited by Tj max

3) Identical low side and high side switch with identical RG

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