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IPD65R1K4C6 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IPD65R1K4C6 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 15 page 4 650VCoolMOS™C6PowerTransistor IPD65R1K4C6 Rev.2.0,2013-07-26 Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID 3.2 A TC=25°C 2.0 TC=100°C Pulsed drain current 2) ID‚pulse 8.3 A TC=25°C Avalanche energy, single pulse EAS 26 mJ ID=0.6A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.10 mJ ID=0.6A,VDD=50V Avalanche current, repetitive IAR 0.6 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V Gate source voltage VGS -20 20 V static -30 30 AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg -55 150 °C Continuous diode forward current IS 2.8 A TC=25°C Diode pulse current IS‚pulse 8.3 A TC=25°C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=0...400V,ISD ≤ID, Tj=25°C (see table 8) Maximum diode commutation speed dif/dt 500 A/µs Power dissipation Ptot 28 W TC=25°C 1) Limited by Tj max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG |
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