IPD60N10S4L-12 datasheet(5/9 Pages) INFINEON

Part #	IPD60N10S4L-12

Description	OptiMOSTM-T2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPD60N10S4L-12

5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I D = f(V DS); T j = 25 °C

R DS(on) = f(I D); T j = 25 °C

parameter: V GS

7 Typ. transfer characteristics

8 Typ. drain-source on-state resistance

I D = f(V GS); V DS = 6V

R DS(on) = f(T j); I D = 60 A; V GS = 10 V

parameter: T j

4

7

10

13

16

19

22

-60

-20

20

60

100

140

180

T j [°C]

4 V

4.5 V

5 V

10 V

3.5 V

0

60

120

180

240

0

1

2

3

4

V DS [V]

3.5 V

4 V

4.5 V

5 V

10 V

5

10

15

20

25

30

35

40

45

50

0

60

120

180

240

I D [A]

-55 °C

25 °C

175 °C

0

50

100

150

200

250

1

2

3

4

5

V GS [V]

Rev. 1.0

page 5

2011-11-30

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IPD60N10S4L-12 Datasheet(PDF) 5 Page - Infineon Technologies AG

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