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SQ4946EY Datasheet(PDF) 4 Page - Vishay Siliconix |
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SQ4946EY Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 9 page  www.vishay.com Document Number: 74492 4 S-81560-Rev. C, 23-Oct-08 SQ4946EY Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Drain Source Breakdown vs. Junction Temperature 0.4 0.7 1.0 1.3 1.6 1.9 2.2 - 50 - 25 0 25 50 75 100 125 150 175 VGS = 10 V ID = 4.5 A TJ - Junction Temperature (°C) - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA TJ - Temperature (°C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 20 VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 175 °C 40 44 48 52 56 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Graph to be available upon completion of testing |
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