M74VHC1G126DFT1G datasheet(3/6 Pages) ONSEMI

Part #	M74VHC1G126DFT1G

Description	Noninverting 3-State Buffer

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MC74VHC1G126

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3

DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

VCC

(V)

TA = 25°C

TA ≤ 85°C

−55 ≤ TA ≤ 125°C

Unit

Min

Typ

Max

Min

Max

Min

Max

VIH

Minimum High−Level

Input Voltage

2.0

3.0

4.5

5.5

1.5

2.1

3.15

3.85

1.5

2.1

3.15

3.85

1.5

2.1

3.15

3.85

V

VIL

Maximum Low−Level

Input Voltage

2.0

3.0

4.5

5.5

0.5

0.9

1.35

1.65

0.5

0.9

1.35

1.65

0.5

0.9

1.35

1.65

V

VOH

Minimum High−Level

Output Voltage

VIN = VIH or VIL

IOH = −50 mA

2.0

3.0

4.5

1.9

2.9

4.4

2.0

3.0

4.5

1.9

2.9

4.4

1.9

2.9

4.4

V

VIN = VIH or VIL

IOH = −4 mA

IOH = −8 mA

3.0

4.5

2.58

3.94

2.48

3.80

2.34

3.66

V

VOL

Maximum Low−Level

Output Voltage

VIN = VIH or VIL

IOL = 50 mA

2.0

3.0

4.5

0.0

0.1

V

VIN = VIH or VIL

IOL = 4 mA

IOL = 8 mA

3.0

4.5

0.36

0.44

0.52

V

IOZ

Maximum 3−State

Leakage Current

VIN = VIH or VIL

VOUT = VCC or GND

5.5

±0.2

5

±2.5

mA

IIN

Maximum Input

Leakage Current

VIN = 5.5 V or GND

0 to

5.5

±0.1

±1.0

mA

ICC

Maximum Quiescent

Supply Current

VIN = VCC or GND

5.5

1.0

20

40

mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns

Symbol

Parameter

Test Conditions

TA = 25°C

TA ≤ 85°C

−55 ≤ TA ≤ 125°C

Unit

Min

Typ

Max

Min

Max

Min

Max

tPLH,

tPHL

Maximum Propagation

Delay, Input A to Y

(Figures 3. and 5.)

VCC = 3.3 ± 0.3 V CL = 15 pF

CL = 50 pF

4.5

6.4

8.0

11.5

9.5

13.0

12.0

16.0

ns

VCC = 5.0 ± 0.5 V CL = 15 pF

CL = 50 pF

3.5

4.5

5.5

7.5

6.5

8.5

10.5

tPZL,

tPZH

Maximum Output Enable

Time, Input OE to Y

(Figures 4. and 5.)

VCC = 3.3 ± 0.3 V CL = 15 pF

RL = 1000 W

CL = 50 pF

4.5

6.4

8.0

11.5

9.5

13.0

11.5

15.0

ns

VCC = 5.0 ± 0.5 V CL = 15 pF

RL = 1000 W

CL = 50 pF

3.5

4.5

5.1

7.1

6.0

8.0

8.5

10.5

tPLZ,

tPHZ

Maximum Output Disable

Time, Input OE to Y

(Figures 4. and 5.)

VCC = 3.3 ± 0.3 V CL = 15 pF

RL = 1000 W

CL = 50 pF

6.5

8.0

9.7

13.2

11.5

15.0

14.5

18.0

ns

VCC = 5.0 ± 0.5 V CL = 15 pF

RL = 1000 W

CL = 50 pF

4.8

7.0

6.8

8.8

8.0

10.0

12.0

CIN

Maximum Input

Capacitance

4.0

10

pF

COUT

Maximum 3−State Output

Capacitance (Output in

High Impedance State)

6.0

pF

CPD

Power Dissipation Capacitance (Note 5)

Typical @ 25°C, VCC = 5.0 V

pF

8.0

5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic

power consumption; PD = CPD VCC2 fin + ICC VCC.

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