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NLV17SZ125DFT2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NLV17SZ125DFT2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 12 page NL17SZ125 www.onsemi.com 3 MAXIMUM RATINGS Symbol Parameter Value Units VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V VOUT DC Output Voltage (SOT−353/TSOP−5/SC−88A/SOT−553/UDFN Packages) Power−Down Mode −0.5 to +7.0 V VOUT DC Output Voltage (SOT−953 Package) −0.5 to VCC +0.5 V IIK DC Input Diode Current −50 mA IOK DC Output Diode Current VOUT < GND, VOUT > VCC (SOT−953 Package) ±50 mA IOK DC Output Diode Current VOUT < GND (SOT−353/SC70−5/SC−88A/SOT−553 Packages) −50 mA IOUT DC Output Sink Current ±50 mA ICC DC Supply Current per Supply Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias +150 °C qJA Thermal Resistance (Note 1) SC−88A/SOT−553 TSOP−5 350 230 °C/W PD Power Dissipation in Still Air at 85 °C 150 mW MSL Moisture Sensitivity Level 1 FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in VESD ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) u2000 u200 N/A V ILATCHUP Latchup Performance Above VCC and Below GND at 125°C (Note 5) ±100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A. 5. Tested to EIA/JESD78. |
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