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NLV17SZ125DFT2G Datasheet(PDF) 3 Page - ON Semiconductor

Part # NLV17SZ125DFT2G
Description  Non-Inverting 3-State Buffer
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NLV17SZ125DFT2G Datasheet(HTML) 3 Page - ON Semiconductor

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NL17SZ125
www.onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VCC
DC Supply Voltage
−0.5 to +7.0
V
VIN
DC Input Voltage
−0.5 to +7.0
V
VOUT
DC Output Voltage
(SOT−353/TSOP−5/SC−88A/SOT−553/UDFN Packages)
Power−Down Mode
−0.5 to +7.0
V
VOUT
DC Output Voltage
(SOT−953 Package)
−0.5 to VCC +0.5
V
IIK
DC Input Diode Current
−50
mA
IOK
DC Output Diode Current
VOUT < GND, VOUT > VCC
(SOT−953 Package)
±50
mA
IOK
DC Output Diode Current
VOUT < GND
(SOT−353/SC70−5/SC−88A/SOT−553 Packages)
−50
mA
IOUT
DC Output Sink Current
±50
mA
ICC
DC Supply Current per Supply Pin
±100
mA
TSTG
Storage Temperature Range
−65 to +150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
°C
TJ
Junction Temperature Under Bias
+150
°C
qJA
Thermal Resistance (Note 1)
SC−88A/SOT−553
TSOP−5
350
230
°C/W
PD
Power Dissipation in Still Air at 85
°C
150
mW
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
ILATCHUP
Latchup Performance Above VCC and Below GND at 125°C (Note 5)
±100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.


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