NLU1GT50CMX1TCG datasheet(2/9 Pages) ONSEMI

Part #	NLU1GT50CMX1TCG

Description	Single Buffer, Non-Inverting, TTL Level

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MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCC

DC Supply Voltage

−0.5 to +7.0

V

VIN

DC Input Voltage

−0.5 to +7.0

V

VOUT

DC Output Voltage

−0.5 to +7.0

V

IIK

DC Input Diode Current

VIN < GND

−20

mA

IOK

DC Output Diode Current

VOUT < GND

±20

mA

IO

DC Output Source/Sink Current

±12.5

mA

ICC

DC Supply Current Per Supply Pin

±25

mA

IGND

DC Ground Current per Ground Pin

±25

mA

TSTG

Storage Temperature Range

−65 to +150

°C

TL

Lead Temperature, 1 mm from Case for 10 Seconds

260

°C

TJ

Junction Temperature Under Bias

150

°C

MSL

Moisture Sensitivity

Level 1

FR

Flammability Rating Oxygen

Index: 28 to 34

UL 94 V−0 @ 0.125 in

VESD

ESD Withstand Voltage

Human Body Model (Note 2)

Machine Model (Note 3)

Charged Device Model (Note 4)

> 2000

> 200

N/A

V

ILATCHUP1

Latchup Performance Above VCC and Below GND at 125 °C (Note 5)

±500

mA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.

2. Tested to EIA / JESD22−A114−A.

3. Tested to EIA / JESD22−A115−A.

4. Tested to JESD22−C101−A.

5. Tested to EIA / JESD78.

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

VCC

Positive DC Supply Voltage

1.65

5.5

V

VIN

Digital Input Voltage

0

5.5

V

VOUT

Output Voltage

0

5.5

V

TA

Operating Free−Air Temperature

−55

+125

°C

Dt/DV

Input Transition Rise or Fall Rate

VCC = 3.3 V ± 0.3 V

VCC = 5.0 V ± 0.5 V

0

100

20

ns/V

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