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TPS54373 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS54373 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 16 page TPS54373 SLVS455A − JANUARY 2003 − REVISED JUNE 2003 www.ti.com 4 ELECTRICAL CHARACTERISTICS (continued) TJ = −40 °C to 125°C, VI = 3 V to 6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ERROR AMPLIFIER Error amplifier open loop voltage gain 1 k Ω COMP to AGND(1) 90 110 dB Error amplifier unity gain bandwidth Parallel 10 k Ω, 160 pF COMP to AGND(1) 3 5 MHz Error amplifier common mode input voltage range Powered by internal LDO(1) 0 VBIAS V Input bias current, VSENSE VSENSE = Vref 60 250 nA Output voltage slew rate (symmetric), COMP(1) 1.0 1.4 V/ µs PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin (excluding deadtime) 10-mV overdrive(1) 70 85 ns SLOW-START/ENABLE Enable threshold voltage, SS/ENA 0.82 1.20 1.40 V Enable hysteresis voltage, SS/ENA 0.03 V Falling edge deglitch, SS/ENA(1) 2.5 µs Internal slow-start time 2.6 3.35 4.1 ms Charge current, SS/ENA SS/ENA = 0 V 3 5 8 µA Discharge current, SS/ENA SS/ENA = 0.2 V, VI = 2.7 V 1.5 2.3 4.0 mA POWER GOOD Power good threshold voltage VSENSE falling 90 %Vref Power good hysteresis voltage(1) 3 %Vref Power good falling edge deglitch(1) 35 µs Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.3 V Leakage current, PWRGD VI = 5.5 V 1 µA CURRENT LIMIT Current limit trip point VI = 3 V Output shorted(1) 4 6.5 A Current limit trip point VI = 6 V Output shorted(1) 4.5 7.5 A Current limit leading edge blanking time(1) 100 ns Current limit total response time(1) 200 ns THERMAL SHUTDOWN Thermal shutdown trip point(1) 135 150 165 °C Thermal shutdown hysteresis(1) 10 °C OUTPUT POWER MOSFETS rDS(on) Power MOSFET switches VI = 6 V(4) 59 88 m Ω rDS(on) Power MOSFET switches VI = 3 V(4) 85 136 m Ω (1) Specified by design (2) Static resistive loads only (3) Specified by the circuit used in Figure 10 (4) Matched MOSFETs low-side rDS(on) production tested, high-side rDS(on) specified by design |
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