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LMH6639MAX Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMH6639MAX Datasheet(HTML) 3 Page - National Semiconductor (TI) |
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3 / 17 page  3V Electrical Characteristics (Continued) Unless otherwise specified, all limits guaranteed for at T J = 25˚C, V + = 3V, V− = 0V, V O =VCM =V +/2, and R L =2k Ω to V+/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units V O Output Swing High R L =2k Ω to V+/2, V ID = 200mV 2.90 2.98 V R L = 150 Ω to V+/2, V ID = 200mV 2.75 2.93 R L =50 Ω to V+/2, V ID = 200mV 2.6 2.85 Output Swing Low R L =2k Ω to V+/2, V ID = −200mV 25 75 mV R L = 150 Ω to V+/2, V ID = −200mV 75 200 R L =50 Ω to V+/2, V ID = −200mV 130 300 I SC Output Short Circuit Current Sourcing to V +/2, (Note 10) 50 35 120 mA Sinking to V +/2, (Note 10) 67 40 140 I OUT Output Current V O = 0.5V from either supply 99 mA PSRR Power Supply Rejection Ratio (Note 12) 72 96 dB I S Supply Current (Enabled) No Load 3.5 5.6 7.5 mA Supply Current (Disabled) 0.3 0.5 0.7 TH_SD Threshold Voltage for Shutdown Mode V +−1.59 V I_SD PIN Shutdown Pin Input Current SD Pin Connect to 0V (Note 7) −13 µA T ON On Time After Shutdown 83 nsec T OFF Off Time to Shutdown 160 nsec R OUT Output Resistance Closed Loop R F = 10k Ω, f = 1kHz, A V =−1 27 m Ω R F = 10k Ω, f = 1MHz, A V = −1 266 5V Electrical Characteristics Unless otherwise specified, all limits guaranteed for at T J = 25˚C, V + = 5V, V− = 0V, V O =VCM =V +/2, and R L =2k Ω to V+/2. Boldface limits apply at the temperature extremes. Symbol Parameter Conditions Min (Note 6) Typ (Note 5) Max (Note 6) Units BW −3dB BW A V = +1 130 190 MHz A V =−1 64 BW 0.1dB 0.1dB Gain Flatness R F = 2.51k Ω,R L =1k Ω, 16.4 MHz FPBW Full Power Bandwidth A V = +1, VOUT =2VPP, −1dB 28 MHz GBW Gain Bandwidth Product A V = +1 86 MHz e n Input-Referred Voltage Noise R F = 33k Ω f = 10kHz 19 nV/ f = 1MHz 16 i n Input-Referred Current Noise R F =1M Ω f = 10KHz 1.35 pA/ f = 1MHz 0.35 THD Total Harmonic Distortion f = 5MHz, V O =2VPP,AV =+2 R L =1k Ω to V+/2 −60 dBc DG Differential Gain NTSC, A V =+2 R L = 150 Ω to V+/2 0.12 % DP Differential Phase NTSC, A V =+2 R L = 150 Ω to V+/2 0.045 deg T S Settling Time V O =2VPP, ±0.1% 33 ns SR Slew Rate A V = −1, (Note 8) 130 172 V/µs V OS Input Offset Voltage 1.02 5 7 mV www.national.com 3 |
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