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2SK1658 Datasheet(PDF) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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2SK1658 Datasheet(HTML) 1 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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1 / 5 page  JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK 1658 N-channel MOSFET SOT-323 1. GATE 2. SOURCE 3. DRAIN MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage 30 V VGS Gate-Source Voltage ± 7 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RθJA Thermal Resistance from Junction to Ambient 625 ℃ /W www.cj-elec.com 1 B,Apr,2015 M ARKING Equivalent Circuit FEATURE Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Easily designed drive circuits Easy to parallel Portable equipment V(BR)DSS RDS(on)MAX ID 30 V 10Ω@4V 100mA 15Ω@2.5V Interfacing , Switching APPLICATION |
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