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CJT04N15 Datasheet(PDF) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
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CJT04N15 Datasheet(HTML) 2 Page - Jiangsu Changjiang Electronics Technology Co., Ltd |
2 / 5 page Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 150 Drain-source diode forward voltage(note2) VSD VGS = 0V, IS = 2.0A 1. 2 V Zero gate voltage drain current IDSS VDS = 150V, VGS =0V 1 µA Gate-body leakage current (note2) IGSS VDS =0V, VGS =± 20V ± 100 nA On characteristics (note2) Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA 1.5 2.0 2.5 V Static drain-source on-resistance RDS(on) VGS =10V, ID = 4.0A 130 160 mΩ Forward transconductance gfs VDS = 15V, ID =4A 5 S Dynamic characteristics (note 3) Input capacitance Ciss 900 Output capacitance Coss 115 Reverse transfer capacitance Crss VDS =25V,VGS =0V,f =1MHz 70 pF Switching characteristics (note 3) Total gate charge Qg 19 Gate-source charge Qgs 5.5 Gate-drain charge Qgd VDS = 75V,VGS =10V,ID =1.5A 7 nC Turn-on delay time (note3) td(on) 8 Turn-on rise time (note3) tr 10 Turn-off delay time (note3) td(off) 20 Turn-off fall time (note3) tf VDS=75V, VGS=10V, RG= 6Ω, ID =1.0A,RL=75Ω 15 ns Notes : 1. Repetitive Rating:Pulse width limited by maximum junction temperature. 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. These parameters have no way to verify. MOSFET ELECTRICAL CHARACTERISTICS a T =25 ℃ unless otherwise specified www.cj-elec.com 2 A-2,May,2016 |
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