IRFI1310NPbF

100V

0.036



24A

Description

Fifth Generation HEXFETs from International Rectifier utilize

advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer with

an extremely efficient and reliable device for use in a wide variety

of applications

The TO-220 Fullpak eliminates the need for additional insulating

hardware in commercial-industrial applications.

The moulding

compound used provides a high isolation capability and a low

thermal resistance between the tab and external heatsink. This

isolation is equivalent to using a 100 micron mica barrier with

standard TO-220 product. The Fullpak is mounted to a heatsink

using a single clip or by a single screw fixing.

1

2016-5-27

 

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

24

A

17

Pulsed Drain Current 

140

Maximum Power Dissipation

56

W

Linear Derating Factor

0.37

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy (Thermally Limited) 

420

mJ

Avalanche Current 

22

A

Repetitive Avalanche Energy 

5.6

mJ

dv/dt

Peak Diode Recovery dv/dt

5.0

V/ns

Operating Junction and

-55 to + 175

 

Storage Temperature Range

°C 

Soldering Temperature, for 10 seconds (1.6mm from case)

300

 

Mounting torque, 6-32 or M3 screw

10 lbf•in (1.1N•m)

 

G

D

S

Gate

Drain

Source

 Advanced Process Technology

 Isolated Package

 High Voltage Isolation = 2.5KVRMS 

 Sink to Lead Creepage Dist. = 4.8mm

 Fully Avalanche Rated

 Lead-Free

TO-220 Full-Pak

Base Part Number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRFI1310NPbF

TO-220 Full-Pak

Tube

50

IRFI1310NPbF

Thermal Resistance  

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

2.7

Junction-to-Ambient

–––

65

°C/W

G

D

S