IPX80P03P4-05 datasheet(3/9 Pages) INFINEON

Part #	IPX80P03P4-05

Description	OptiMOS짰-P2 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 9 page

IPB80P03P4-05

IPI80P03P4-05, IPP80P03P4-05

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

7900

10300 pF

Output capacitance

C oss

-

2340

3040

Reverse transfer capacitance

Crss

-

50

100

Turn-on delay time

t d(on)

-35

-

ns

Rise time

t r

-10

-

Turn-off delay time

t d(off)

-70

-

Fall time

t f

-20

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-42

55

nC

Gate to drain charge

Q gd

-10

20

Gate charge total

Q g

-

100

130

Gate plateau voltage

V plateau

-

-5.3

-

V

Reverse Diode

Diode continous forward current

2)

I S

-

-80

A

Diode pulse current

2)

I S,pulse

-

-320

Diode forward voltage

V SD

V GS=0V, I F=-80A,

T j=25°C

-

-1.3

V

Reverse recovery time

2)

t rr

-

100

-

ns

Reverse recovery charge

2)

Q rr

-80

-

nC

T C=25°C

Values

V GS=0V, V DS=-25V,

f =1MHz

V DD=-15V,

V GS=-10V, I D=-80A,

R G=3.5Ω

V DD=-24V, I D=-80A,

V GS=0 to -10V

V R=-15V, I F=-80A,

di F/dt =-100A/µs

2) Defined by design. Not subject to production test.

3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 1.1K/W the chip is able to carry -146A at 25°C.

Rev. 1.0

page 3

2008-09-30

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IPX80P03P4-05 Datasheet(PDF) 3 Page - Infineon Technologies AG

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