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EM6A9320BIB-4H Datasheet(PDF) 11 Page - Etron Technology, Inc.

Part # EM6A9320BIB-4H
Description  4M x 32 bit DDR Synchronous DRAM (SDRAM)
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Manufacturer  ETRON [Etron Technology, Inc.]
Direct Link  http://www.etron.com
Logo ETRON - Etron Technology, Inc.

EM6A9320BIB-4H Datasheet(HTML) 11 Page - Etron Technology, Inc.

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EtronTech
EM6A9320BIB
Etron Confidential
11
Rev. 1.2
Aug. /2013
Table 17. D.C. Characteristics (VDD=2.5V ± 0.2V, TA =0~70°C)
-4
-5
Parameter & Test Condition
Symbol
Max.
Unit
OPERATING CURRENT: One bank; Active-Precharge; tRC=tRC (min);
tCK=tCK (min); DQ, DM and DQS inputs changing once per clock cycle;
Address and control inputs changing once every two clock cycles.
IDD0
220
210
mA
OPERATING CURRENT : One bank; Active-Read-Precharge; BL=4;
tRC=tRC(min); tCK=tCK(min); lout=0mA; Address and control inputs
changing once per clock cycle
IDD1
260
240
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle;
power-down mode; tCK=tCK(min); CKE=LOW
IDD2P
75
75
mA
IDLE STANDBY CURRENT : CKE = HIGH; CS =HIGH(DESELECT); All
banks idle; tCK=tCK(min); Address and control inputs changing once per
clock cycle; VIN=VREF for DQ, DQS and DM
IDD2N
100
100
mA
ACTIVE POWER-DOWN STANDBY CURRENT : one bank active; power-
down mode; CKE=LOW; tCK=tCK(min)
IDD3P
75
75
mA
ACTIVE STANDBY CURRENT : CS =HIGH;CKE=HIGH; one bank active ;
tRC=tRC(max);tCK=tCK(min);Address and control inputs changing once per
clock cycle; DQ,DQS,and DM inputs changing twice per clock cycle
IDD3N
230
220
mA
OPERATING CURRENT BURST READ : BL=2; READs; Continuous
burst; one bank active; Address and control inputs changing once per clock
cycle; tCK=tCK(min); lout=0mA;50% of data changing on every transfer
IDD4R
440
420
mA
OPERATING CURRENT BURST Write : BL=2; WRITES; Continuous
Burst ;one bank active; address and control inputs changing once per clock
cycle; tCK=tCK(min); DQ,DQS,and DM changing twice per clock cycle; 50%
of data changing on every transfer
IDD4W
440
420
mA
AUTO REFRESH CURRENT : tRC=tRFC(min); tCK=tCK(min)
IDD5
330
300
mA
SELF REFRESH CURRENT: Self Refresh Mode ;
CKE≦0.2V;tCK=tCK(min)
IDD6
6
6
mA
BURST OPERATING CURRENT 4 bank operation:
Four bank interleaving READs; BL=4;with Auto Precharge; tRC=tRC(min);
tCK=tCK(min); Address and control inputs change only during Active,
READ , or WRITE command
IDD7
600
570
mA
Note:
1. Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device.
2. All voltages are referenced to VSS.
3. These parameters depend on the cycle rate and these values are measured by the cycle rate
under the minimum value of tCK and tRC. Input signals are changed one time during tCK.
4. Power-up sequence is described in later page.


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