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SPD15P10PG Datasheet(PDF) 6 Page - Infineon Technologies AG |
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SPD15P10PG Datasheet(HTML) 6 Page - Infineon Technologies AG |
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6 / 10 page  SPD15P10P G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-10.6 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-1.54 mA 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j typ. 98 % 0 100 200 300 400 500 -60 -20 20 60 100 140 180 T j [°C] Ciss Coss Crss 10 3 10 2 10 1 0 2040 6080 -V DS [V] typ. min. max. 0 1 2 3 4 5 -60 -20 20 60 100 140 180 T j [°C] 25 °C, typ 175 °C, typ 25 °C, 98% 175 °C, 98% 10 2 10 1 10 0 10 -1 10 -2 0 0.5 1 1.5 -V SD [V] Rev 1. 8 page 6 20 12-09-11 |
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