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BSP613P Datasheet(PDF) 3 Page - Infineon Technologies AG |
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BSP613P Datasheet(HTML) 3 Page - Infineon Technologies AG |
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3 / 9 page  20 16-05-30 Rev.2. 8 Page 3 BSP613P Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID|*RDS(on)max , ID=2.9A 2.7 5.4 - S Input capacitance Ciss VGS=0, VDS=-25V, f =1MHz - 715 875 pF Output capacitance Coss - 230 295 Reverse transfer capacitance Crss - 90 120 Turn-on delay time td(on) VDD=-30V, VGS=-10V, ID=2.9A, RG=2.7Ω - 6.7 17 ns Rise time tr - 9 18 Turn-off delay time td(off) - 26 52 Fall time tf - 7 19 Gate Charge Characteristics Gate to source charge Qgs VDD=-48V, ID=2.9A - 2.5 3.8 nC Gate to drain charge Qgd - 8.9 14.3 Gate charge total Qg VDD=-48V, ID=2.9A, VGS=0 to -10V - 22 33 Gate plateau voltage V(plateau) VDD=-48V, ID=2.9A - -3.9 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -2.9 A Inv. diode direct current, pulsed ISM - - -11.6 Inverse diode forward voltage VSD VGS=0V, |IF| = |IS| - -0.8 -1.1 V Reverse recovery time trr VR=-30V, |IF| = |IS|, diF/dt=100A/µs - 37.2 79 ns Reverse recovery charge Qrr - 59.8 112 nC |
Similar Part No. - BSP613P_16 |
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Similar Description - BSP613P_16 |
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