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GA125TS120U Datasheet(PDF) 2 Page - International Rectifier |
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GA125TS120U Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  GA125TS120U 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 989 1484 VCC = 400V Qge Gate - Emitter Charge (turn-on) — 167 250 nC IC = 148A Qgc Gate - Collector Charge (turn-on) — 328 492 TJ = 25°C td(on) Turn-On Delay Time — 186 — RG1 = 15Ω, RG2 = 0Ω, tr Rise Time — 159 — ns IC = 125A td(off) Turn-Off Delay Time — 459 — VCC = 720V tf Fall Time — 404 — VGE = ±15V Eon Turn-On Switching Energy — 19 — mJ Inductor load Eoff (1) Turn-Off Switching Energy — 31 — Ets (1) Total Switching Energy — 49 75 Cies Input Capacitance — 22258 — VGE = 0V Coes Output Capacitance — 989 — pF VCC = 30V Cres Reverse Transfer Capacitance — 192 —ƒ = 1 MHz trr Diode Reverse Recovery Time — 181 — ns IC = 125A Irr Diode Peak ReverseCurrent — 126 — ARG1 = 15Ω Qrr Diode Recovery Charge — 11360 — nC RG2 = 0Ω di(rec)M/dt Diode Peak Rate of Fall of Recovery — 1875 — A/µs VCC = 720V During tb di/dt =1448A/µs Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 —— VGE = 0V, IC = 1mA VCE(on) Collector-to-Emitter Voltage — 2.2 3.0 VGE = 15V, IC = 125A — 2.1 — VVGE = 15V, IC = 125A, TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = 6.0V, IC = 1.5mA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°CVCE = 6.0V, IC = 1.5mA gfe Forward Transconductance ➃ — 170 — SVCE = 25V, IC = 125A ICES Collector-to-Emitter Leaking Current —— 1.0 mA VGE = 0V, VCE = 1200V —— 10 VGE = 0V, VCE = 1200V, TJ = 125°C VFM Diode Forward Voltage - Maximum — 2.7 4.2 V IF = 125A, VGE = 0V — 2.6 — IF = 125A, VGE = 0V, TJ = 125°C IGES Gate-to-Emitter Leakage Current —— 250 nA VGE = ±20V Dynamic Characteristics - TJ = 125°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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