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EN29LV800T70RSP Datasheet(PDF) 1 Page - Eon Silicon Solution Inc. |
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EN29LV800T70RSP Datasheet(HTML) 1 Page - Eon Silicon Solution Inc. |
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1 / 43 page  4800 Great America Parkway, Suite 202 Tel: 408-235-8680 Santa Clara, CA 95054 Fax: 408-235-8685 1 EN29LV800 Rev 0.4 Release Date: 2002/01/29 da0. FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors. • Manufactured on 0.28 µm process technology • High performance - Access times as fast as 70 ns • Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) • Flexible Sector Architecture: - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode) - One 8 Kword, two 4 Kword, one 16 Kword and fifteen 32 Kword sectors (word mode) - Supports full chip erase - Individual sector erase supported - Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors Additionally, temporary Sector Group Unprotect allows code changes in previously locked sectors. • High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 500ms typical • JEDEC Standard program and erase commands • JEDEC standard DATA polling and toggle bits feature • Single Sector and Chip Erase • Sector Unprotect Mode • Embedded Erase and Program Algorithms • Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode • 0.28 µm double-metal double-poly triple-well CMOS Flash Technology • Low Vcc write inhibit < 2.5V • >100K program/erase endurance cycle • 48-pin TSOP (Type 1) • Commercial Temperature Range GENERAL DESCRIPTION The EN29LV800 is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800 features 3.0V voltage read and write operation, with access times as fast as 55ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV800 has separate Output Enable ( OE ), Chip Enable ( CE ), and Write Enable (WE) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector. EN29LV800 8 Megabit (1024K x 8-bit / 512K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
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