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MC74HCT366ADG Datasheet(PDF) 4 Page - ON Semiconductor

Part # MC74HCT366ADG
Description  Hex 3-State Inverting Buffer
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74HCT366ADG Datasheet(HTML) 4 Page - ON Semiconductor

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MC74HCT366A
http://onsemi.com
4
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Unit
Guaranteed Limit
VCC
V
Test Conditions
Parameter
Symbol
Unit
v 125_C
v 85_C
– 55 to
25_C
VCC
V
Test Conditions
Parameter
IOZ
Maximum Three−State
Leakage Current
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
± 0.5
± 5.0
± 10
μA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 μA
6.0
4
40
160
μA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Symbol
Parameter
VCC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 3)
2.0
3.0
4.5
6.0
120
60
24
20
150
75
30
26
180
90
36
31
ns
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
220
110
44
37
275
140
55
47
330
170
66
56
ns
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to Output Y
(Figures 2 and 4)
2.0
3.0
4.5
6.0
220
110
44
37
275
140
55
47
330
170
66
56
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
2.0
3.0
4.5
6.0
60
22
12
10
75
28
15
13
90
34
18
15
ns
Cin
Maximum Input Capacitance
10
10
10
pF
Cout
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
15
15
15
pF
CPD
Power Dissipation Capacitance (Per Buffer)*
Typical @ 25°C, VCC = 5.0 V
pF
60
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC.


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