EM638165TS-5IG datasheet(1/53 Pages) ETRON

Part #	EM638165TS-5IG

Description	4M x 16 bit Synchronous DRAM (SDRAM)

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Manufacturer	ETRON [Etron Technology, Inc.]

Direct Link	http://www.etron.com

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EtronTech

EM638165

Etron Technology, Inc.

No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.

TEL: (886)-3-5782345

FAX: (886)-3-5778671

Etron Technology, Inc. reserves the right to change products or specification without notice.

4M x 16 bit Synchronous DRAM (SDRAM)

Preliminary (Rev. 5.2, Dec. /2013)

Features

• Fast access time from clock: 4.5/5.4/5.4 ns

•Fast clock rate: 200/166/143 MHz

• Fully synchronous operation

• Internal pipelined architecture

• 1M word x 16-bit x 4-bank

• Programmable Mode registers

- CAS Latency: 2, or 3

- Burst Length: 1, 2, 4, 8, or full page

- Burst Type: Sequential or Interleaved

- Burst stop function

• Auto Refresh and Self Refresh

• 4096 refresh cycles/64ms

• CKE power down mode

• Industrial Temperature: -40~85°C

• Single +3.3V ± 0.3V power supply

• Interface: LVTTL

• 54-pin 400 mil plastic TSOP II package

- Pb and Halogen Free

• 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package

- Pb free and Halogen free

Table1. Key Specifications

Table 2. Ordering Information

TS: indicates TSOPII Package

BM: indicates FBGA Package

I: indicates Industrial grade

G: indicates Pb and Halogen Free for TSOPII Package

H: indicates Pb free and Halogen free

Overview

The EM638165 SDRAM is a high-speed CMOS

synchronous

DRAM

containing

64

Mbits.

It

is

internally configured as 4 Banks of 1M word x 16

DRAM with a synchronous interface (all signals are

registered on the positive edge of the clock signal,

CLK). Read and write accesses to the SDRAM are

burst oriented; accesses start at a selected location

and continue for a programmed number of locations

in a programmed sequence. Accesses begin with the

registration of a Bank Activate command which is

then followed by a Read or Write command.

The EM638165 provides for programmable Read

or Write burst lengths of 1, 2, 4, 8, or full page, with a

burst termination option. An auto precharge function

may be enabled to provide a self-timed row precharge

that is initiated at the end of the burst sequence. The

refresh functions, either Auto or Self Refresh are easy

to use. By having a programmable mode register, the

system can choose the most suitable modes to

maximize its performance. These devices are well

suited

for

applications

requiring

high

memory

bandwidth

and

particularly

well

suited

to

high

performance PC applications.

EM638165

-5I/6I/7I

tCK3 Clock Cycle time(min.)

5/6/7

ns

tAC3 Access time from CLK(max.) 4.5/5.4/5.4 ns

tRAS Row Active time(min.)

40/42/42

ns

tRC Row Cycle time(min.)

55/60/63

ns

Part Number

Frequency

Package

EM638165TS -5IG

200MHz

TSOP II

EM638165TS -6IG

166MHz

TSOP II

EM638165TS -7IG

143MHz

TSOP II

EM638165BM -5IH

200MHz

FBGA

EM638165BM -6IH

166MHz

FBGA

EM638165BM -7IH

143MHz

FBGA

Similar Part No. - EM638165TS-5IG

Manufacturer	Part #	Datasheet	Description
Etron Technology, Inc.	EM638165TS-5G	519Kb / 53P	4M x 16 bit Synchronous DRAM (SDRAM)

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EM638165TS-5IG Datasheet(PDF) 1 Page - Etron Technology, Inc.

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