Electronic Components Datasheet Search |
|
EM638165TS-5IG Datasheet(PDF) 1 Page - Etron Technology, Inc. |
|
EM638165TS-5IG Datasheet(HTML) 1 Page - Etron Technology, Inc. |
1 / 53 page EtronTech EM638165 Etron Technology, Inc. No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671 Etron Technology, Inc. reserves the right to change products or specification without notice. 4M x 16 bit Synchronous DRAM (SDRAM) Preliminary (Rev. 5.2, Dec. /2013) Features • Fast access time from clock: 4.5/5.4/5.4 ns •Fast clock rate: 200/166/143 MHz • Fully synchronous operation • Internal pipelined architecture • 1M word x 16-bit x 4-bank • Programmable Mode registers - CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function • Auto Refresh and Self Refresh • 4096 refresh cycles/64ms • CKE power down mode • Industrial Temperature: -40~85°C • Single +3.3V ± 0.3V power supply • Interface: LVTTL • 54-pin 400 mil plastic TSOP II package - Pb and Halogen Free • 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package - Pb free and Halogen free Table1. Key Specifications Table 2. Ordering Information TS: indicates TSOPII Package BM: indicates FBGA Package I: indicates Industrial grade G: indicates Pb and Halogen Free for TSOPII Package H: indicates Pb free and Halogen free Overview The EM638165 SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command. The EM638165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. EM638165 -5I/6I/7I tCK3 Clock Cycle time(min.) 5/6/7 ns tAC3 Access time from CLK(max.) 4.5/5.4/5.4 ns tRAS Row Active time(min.) 40/42/42 ns tRC Row Cycle time(min.) 55/60/63 ns Part Number Frequency Package EM638165TS -5IG 200MHz TSOP II EM638165TS -6IG 166MHz TSOP II EM638165TS -7IG 143MHz TSOP II EM638165BM -5IH 200MHz FBGA EM638165BM -6IH 166MHz FBGA EM638165BM -7IH 143MHz FBGA |
Similar Part No. - EM638165TS-5IG |
|
Similar Description - EM638165TS-5IG |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |