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EM638165BM-6H Datasheet(PDF) 9 Page - Etron Technology, Inc.

Part # EM638165BM-6H
Description  4M x 16 bit Synchronous DRAM (SDRAM)
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Manufacturer  ETRON [Etron Technology, Inc.]
Direct Link  http://www.etron.com
Logo ETRON - Etron Technology, Inc.

EM638165BM-6H Datasheet(HTML) 9 Page - Etron Technology, Inc.

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EtronTech
EM638165
Rev. 5.3
9
Dec. /2013
CLK
COMMAND
T0
T1
T2
T3
T4
T5
T6
NOP
READ A
NOP
NOP
NOP
NOP
WRITE B
NOP
T7
T8
NOP
DQM
DOUT A0
DIN B0
DIN B1
DIN B2
CAS# Latency=3
tCK3, DQ
Must be Hi-Z before
the Write Command
Don’t Care
Figure 8. Read to Write Interval (Burst Length ≧ 4, CAS# Latency = 3)
CLK
COMMAND
T0
T1
T2
T3
T4
T5
T6
NOP
NOP
READ A
NOP
NOP
WRITE B
NOP
NOP
T7
T8
NOP
DQM
DIN B0
DIN B1
DIN B2
DIN B3
CAS# Latency=2
tCK2, DQ
Must be Hi-Z before
the Write Command
Don’t Care
Figure 9. Read to Write Interval (Burst Length ≥ 4, CAS# Latency = 2)
A read burst without the auto precharge function may be interrupted by a BankPrecharge/ PrechargeAll
command to the same bank. The following figure shows the optimum time that BankPrecharge/
PrechargeAll command is issued in different CAS latency.
CLK
COMMAND
T0
T1
T2
T3
T4
T5
T6
READ A
NOP
NOP
NOP
Precharge
NOP
NOP
Activate
T7
T8
NOP
CAS# Latency=2
tCK2, DQ
CAS# Latency=3
tCK3, DQ
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
ADDRESS
Bank,
Col A
Bank (s)
Bank
Row
tRP
Figure 10. Read to Precharge (CAS# Latency = 2, 3)
5 Read and AutoPrecharge command
(RAS# = "H", CAS# = "L", WE# = "H", BAs = Bank, A10 = "H", A0-A7 = Column Address)
The Read and AutoPrecharge command automatically performs the precharge operation after the read
operation. Once this command is given, any subsequent command cannot occur within a time delay of
{tRP(min.) + burst length}. At full-page burst, only the read operation is performed in this command and the
auto precharge function is ignored.


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