33661

MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA

6

20

30

47

k

Ω

Pullup Current Source (Sleep Mode)

–

20

–

µA

Overcurrent Shutdown Threshold

50

75

150

mA

Overcurrent Shutdown Delay (Note 4)

–

10

–

µs

Leakage Current to GND

Recessive State, 8.0 V

0

3.0

20

µA

GND Disconnected

-1.0

–

1.0

mA

Leakage Current to GND

–

1.0

10

µA

TXD High, RXD Low

0

–

V

TXD High, RXD High

–

V

LIN Receiver Threshold Center

0.475

0.5

0.525

LIN Receiver Input Hysteresis

–

–

0.175

LIN Wake-Up Threshold

–

0.5

–

INHIBIT OUTPUT TERMINAL

INH Driver ON Resistance (Normal Mode)

–

35

70

Ω

Leakage Current (Sleep Mode)

0

–

5.0

µA

WAKE TERMINAL

Typical Wake-Up Threshold (EN = 0 V, 7.0 V

HIGH-to-LOW Transition

LOW-to-HIGH Transition

V

Wake-Up Threshold Hysteresis

V

WAKE Input Current

V < 27 V

–

1.0

5.0

µA

Notes

4.

This parameter is guaranteed by design; however, it is not production tested.

5.

STATIC ELECTRICAL CHARACTERISTICS (continued)

Characteristics noted under conditions 7.0 V

Characteristic

Symbol

Min

Typ

Max

Unit

Freescale Semiconductor, Inc.

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