1

MRF281SR1 MRF281ZR1

MOTOROLA RF DEVICE DATA

The RF Sub–Micron MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for digital and analog cellular PCN and PCS base station

applications with frequencies from 1000 to 2500 MHz. Characterized for

operation Class A and Class AB at 26 volts in commercial and industrial

applications.

• Specified Two–Tone Performance @ 1930 and 2000 MHz, 26 Volts

Output Power — 4 Watts PEP

Power Gain — 11 dB

Efficiency — 30%

Intermodulation Distortion — –29 dBc

• Capable of Handling 10:1 VSWR, @ 26 Vdc,

2000 MHz, 4 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Available in Tape and Reel. R1 Suffix = 500 Units per

12 mm, 7 inch Reel.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

65

Vdc

Gate–Source Voltage

±20

Vdc

Derate above 25

°C

20

0.115

Watts

W/

°C

Storage Temperature Range

–65 to +150

°C

Operating Junction Temperature

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

5.74

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

65

74

—

Vdc

Zero Gate Voltage Drain Current

—

—

10

µAdc

Gate–Source Leakage Current

—

—

1

µAdc

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF281/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF281SR1

MRF281ZR1

2000 MHz, 4 W, 26 V

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFETs

CASE 458B–03, STYLE 1

(NI–200S)

(MRF281SR1)

CASE 458C–03, STYLE 1

(NI–200Z)

(MRF281ZR1)

REV 3