IPB027N10N5 datasheet(8/11 Pages) INFINEON

Part #	IPB027N10N5

Description	OptiMOS짧 5 Power-Transistor, 100 V

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Manufacturer	INFINEON [Infineon Technologies AG]

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8

OptiMOSª5Power-Transistor,100V

IPB027N10N5

Rev.2.2,2016-07-20

Final Data Sheet

Diagram9:Drain-sourceon-stateresistance

Tj[°C]

-60

-20

20

60

100

140

180

0

1

2

3

4

5

6

7

max

typ

RDS(on)=f(Tj);ID=100A;VGS=10V

Diagram10:Typ.gatethresholdvoltage

Tj[°C]

-60

-20

20

60

100

140

180

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1840 µA

184 µA

VGS(th)=f(Tj);VGS=VDS;parameter:ID

Diagram11:Typ.capacitances

VDS[V]

0

20

40

60

80

101

102

103

104

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Diagram12:Forwardcharacteristicsofreversediode

VSD[V]

0.0

0.5

1.0

1.5

2.0

100

101

102

103

25 °C

175 °C

25 °C max

175 °C max

IF=f(VSD);parameter:Tj

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