2N65

1 / 9

May,2015-REV.00

www.dyelec.com

1. Gate

2. Drain

3. Source

Pin Definition:

PRODUCT SUMMARY

Current

650

2A

●

●

●

●

650V N-Channel Power MOSFET

RDS(ON) < 4.4Ω@ VGS = 10V, ID =1A

Fast switching capability

Lead free in compliance with EU RoHS directive.

Improved dv/dt capability, high ruggedness

Ordering Information

●

Case: TO-251,TO-252,TO-220,ITO-220

TO-262, TO-263 Package

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Avalanche Current (Note 2)

2.0

A

Continuous Drain Current

2.0

A

Pulsed Drain Current (Note 2)

8.0

A

Avalanche Energy

Single Pulsed (Note 3)

115

mJ

Power Dissipation

TO-220/TO-262/TO-263

44

W

ITO-220

23

W

TO-251/TO-252

34

W

Junction Temperature

+150

°C

Operating Temperature

-55 ~ +150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

Part No.

Package

Packing

DMP2N65-TU

TO-251

75pcs / Tube

DMD2N65-TR

TO-252

2.5Kpcs / 13” Reel

DMT2N65-TU

TO-220

50pcs / Tube

DMF2N65-TU

ITO-220

50pcs / Tube

DMD2N65-TU

TO-252

75pcs / Tube

Block Diagram

D

G

S

DMK2N65-TU

TO-262

50pcs / Tube

DMG2N65-TU

TO-263

DMG2N65-TR

TO-263

800pcs / 13" Reel

50pcs / Tube