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HCD70R350E Datasheet(PDF) 4 Page - SemiHow Co.,Ltd.

Part # HCD70R350E
Description  700V N-Channel Super Junction MOSFET
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Manufacturer  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
Logo SEMIHOW - SemiHow Co.,Ltd.

HCD70R350E Datasheet(HTML) 4 Page - SemiHow Co.,Ltd.

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Typical Characteristics (continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Note :
1. V
GS = 10 V
2. I
D = 6.0 A
T
J, Junction Temperature [
oC]
t
2
t
1
P
DM
25
50
75
100
125
150
0
3
6
9
12
T
C, Case Temperature [
oC]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Note :
1. V
GS = 0 V
2. I
D = 250 A
T
J, Junction Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
* Notes :
1. Z
JC(t) = 1.2
oC/W Max.
2. Duty Factor, D=t
1/t2
3. T
JM - TC = PDM * Z JC(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Square Wave Pulse Duration [sec]
10
-1
10
0
10
1
10
2
10
3
10
-1
10
0
10
1
10
2
10 s
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
* Notes :
1. T
C = 25
oC
2. T
J = 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]


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