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HRLO60N06H Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HRLO60N06H Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 8 page ◎ SEMIHOW REV.A0,December 2016 Electrical Characteristics T J=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units I S Continuous Source-Drain Diode Forward Current -- -- 17 A I SM Pulsed Source-Drain Diode Forward Current -- -- 90 V SD Source-Drain Diode Forward Voltage I S = 17 A, VGS = 0 V -- 0.9 1.2 V trr Reverse Recovery Time I S = 17 A, VR = 30 V di F/dt = 300 A/μs -- 30 -- ㎱ Qrr Reverse Recovery Charge -- 53 -- nC On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 ㎂ 60 -- -- V I DSS Zero Gate Voltage Drain Current V DS = 60 V, VGS = 0 V -- -- 1 ㎂ V DS = 60 V, TJ = 100℃ -- -- 100 ㎂ I GSS Gate-Body Leakage Current V GS = ±20 V, VDS = 0 V -- -- ±100 ㎁ Off Characteristics C iss Input Capacitance V DS = 30 V, VGS = 0 V, f = 1.0 MHz -- 2274 -- ㎊ C oss Output Capacitance -- 793 -- ㎊ C rss Reverse Transfer Capacitance -- 35 -- ㎊ R g Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 1.5 -- Ω Dynamic Characteristics t d(on) Turn-On Time V DS = 30 V, ID = 17 A, R G = 10 Ω -- 11 -- ㎱ t r Turn-On Rise Time -- 7 -- ㎱ t d(off) Turn-Off Delay Time -- 35 -- ㎱ t f Turn-Off Fall Time -- 10 -- ㎱ Q g (10V) Total Gate Charge V DS = 30 V, ID = 17 A, V GS = 10 V -- 36 -- nC Q g (4.5V) Total Gate Charge -- 18 -- nC Q gs Gate-Source Charge -- 5 -- nC Q gd Gate-Drain Charge -- 8 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics V GS Gate Threshold Voltage V DS = VGS, ID = 250 ㎂ 1.0 1.5 2.5 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 17 A -- 4.5 6.0 m Ω V GS = 4.5 V, ID = 15 A -- 5.8 8.0 m Ω g FS Forward Transconductance V DS = 5 V, ID = 17 A -- 45 -- S |
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