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IPD053N08N3G Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # IPD053N08N3G
Description  OptiMOS짰3 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPD053N08N3G Datasheet(HTML) 4 Page - Infineon Technologies AG

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IPD053N08N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
100
101
102
103
10-1
100
101
102
V
DS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-2
10-1
100
101
10-5
10-4
10-3
10-2
10-1
100
t
p [s]
0
30
60
90
120
150
0
50
100
150
200
T
C [°C]
0
20
40
60
80
100
0
50
100
150
200
T
C [°C]
Rev. 1.1
page 4
2014-05-19


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