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IPD50R3K0CE Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPD50R3K0CE Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 14 page 3 500VCoolMOSªCEPowerTransistor IPD50R3K0CE,IPU50R3K0CE Rev.2.3,2016-06-13 Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID - - - - 2.6 1.6 A TC = 25°C TC = 100°C Pulsed drain current 2) ID,pulse - - 4.1 A TC=25°C Avalanche energy, single pulse EAS - - 18 mJ ID =0.5A; VDD = 50V Avalanche energy, repetitive EAR - - 0.03 mJ ID =0.5A; VDD = 50V Avalanche current, repetitive IAR - - 0.5 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30 - - 20 30 V static; AC (f>1 Hz) Power dissipation (non FullPAK) TO-252, TO-251 Ptot - - 26 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 1.8 A TC=25°C Diode pulse current 2) IS,pulse - - 4.1 A TC = 25°C Reverse diode dv/dt 3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2 µs Maximum diode commutation speed 3) dif/dt - - 500 A/ µs VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2 µs 2Thermalcharacteristics Table3ThermalcharacteristicsDPAK,IPAK Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.85 °C/W - Thermal resistance, junction - ambient 4) RthJA - - - 35 62 - °C/W SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm 2 cooling area 4) Soldering temperature, wave- & reflowsoldering allowed Tsold - - 260 °C reflow MSL 1 1) Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 4) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70 µm) for drain connection. PCB is vertical without air stream cooling. |
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